2010. 6. 10 1/2 semiconductor technical data mps8550 epitaxial planar pnp transistor revision no : 3 high current application. feature h complementary to mps8050. maximum rating (ta=25 ? ) to-92 dim millimeters a b c d f g h j k l 4.70 max 4.80 max 3.70 max 0.45 1.00 1.27 0.85 0.45 14.00 0.50 0.55 max 2.30 d 1 2 3 b a j k g h f f l e c e c m n 0.45 max m 1.00 n 1. emitter 3. collector 2. base + _ electrical characteristics (ta=25 ? ) characteristic symbol test condition min. typ. max. unit collector cut-off current i cbo v cb =-35v, i e =0 - - -100 na emitter cut-off current i ebo v eb =-6v, i c =0 - - -100 na collector-base breakdown voltage v (br)cbo i c =-100 a, i e =0 -40 - - v collector-emitter breakdown voltage v (br)ceo i c =-2ma, i b =0 -25 - - v dc current gain h fe (1) v ce =-1v, i c =-5ma 45 170 - h fe (2) (note) v ce =-1v, i c =-100ma 85 160 300 h fe (3) v ce =-1v, i c =-800ma 40 80 - collector-emitter saturation voltage v ce(sat) i c =-800ma, i b =-80ma - -0.28 -0.5 v base-emitter saturation voltage v be(sat) i c =-800ma, i b =-80ma - -0.98 -1.2 v base-emitter voltage v be v ce =-1v, i c =-10ma - -0.66 -1.0 v transition frequency f t v ce =-10v, i c =-50ma 100 200 - mhz collector output capacitance c ob v cb =-10v, f=1mhz, i e =0 - 15 - pf characteristic symbol rating unit collector-base voltage v cbo -40 v collector-emitter voltage v ceo -25 v emitter-base voltage v ebo -6 v collector current i c -1.5 a collector power dissipation p c * 625 mw 400 junction temperature t j 150 ? storage temperature range t stg -55 q 150 ? note : h fe (2) classification b:85 q 160 , c : 120 q 200 , d : 160 q 300 *cu lead-frame : 625mw fe lead-frame : 400mw
2010. 6. 10 2/2 mps8550 revision no : 3 f - i c collector current i (ma) -1 -3 -10 -100 t transition frequency f (mhz) 10 c collector current i (a) 0 0 collector-emitter voltage v (v) ce ce c i - v -0.4 -0.8 -1.2 -1.6 -2.0 -0.1 -0.2 -0.3 -0.4 i =-4.0ma b tc -300 -30 30 50 100 300 v =-10v ce i =-3.5ma b i =-3.0ma b i =-2.5ma b i =-2.0ma b i =-0.5ma b -0.1 collector current i (ma) c base-emitter voltage v (v) be i - v cbe 0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -0.3 -1 -3 -10 -30 -100 -0.5 -5 -50 v =-1v ce -5 -50 -1 -5 -10 -50 100 10 1 5 50 f=1mhz e i =0 collector output capacitance ob collector-base voltage v (v) cb c - v ob cb c (pf) 3 30 -3 -30 -0.5 i =-1.5ma b i =-1.0ma b saturation voltage be(sat), collector current i (ma) c v v - i be(sat), ce(sat) c v v (mv) ce(sat) 0.1 1 10 1000 100 10000 1 10 100 1000 10000 b i =10i b c v (sat) ce be v (sat) 100 dc current gain h 10 collector current i (ma) 0.1 10 1 1000 100 10000 c 1000 fe h - i fe c v =-1v ce
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